| PART |
Description |
Maker |
| 2SD965 |
Satisfactory operation performances at high efficiency with the lowvoltage power supply.
|
TY Semiconductor Co., Ltd
|
| 2SD1119 |
Satisfactory operation performances at high efficiency with the lowvoltage power supply.
|
TY Semiconductor Co., Ltd
|
| M66307FP M66307SP M66307E |
From old datasheet system
LINE SCAN BUFFER with 16BIT MPU BUS COMPATIBLE LINE SCAN BUFFER with 16-BIT MPU BUS COMPATIBLE INPUTS
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| AK4550VT AKM4550 AKD4550 AK4550 AK4550VTP-E2 AK535 |
Enchanced dual bit 20 bit ADC
SPECIALTY CONSUMER CIRCUIT, PDSO16
JT 41C 41#20 PIN PLUG
LOW POWER & SMALL PACKAGE 16BIT CODEC
Low Power & Samll Package 16bit ## CODEC
LOW POWER & SMALL PACKAGE 16BIT CODEC
|
Asahi Kasei Microsystems Co.,Ltd
AKM[Asahi Kasei Microsystems]
Asahi Kasei Microsystem...
|
| A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|
| A43L2616V-6PH A43L2616V-7PH |
Cycle time:6ns; 166MHz CL=3 access time:5.0ns 1M x 16bit x 4banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1M x 16bit x 4banks synchronous DRAM
|
AMIC Technology
|
| CD4049UBC CD4050B CD4050BC CD4049UBC02 CD4050BCN C |
LOGIC GATE|HEX INVERTER|CMOS|SOP|16PIN|PLASTIC
HEX INVERTING BUFFER HEX NON-INVERTING BUFFER
Hex Inverting Buffer •
Hex Inverting Buffer ?Hex Non-Inverting Buffer
|
FAIRCHILD[Fairchild Semiconductor]
|
| CD4049UBC CD4049UBCM CD4049UBCN CD4050 CD4050BCM C |
Hex Inverting Buffer . Hex Non-Inverting Buffer 六角反相缓冲。六角非反相缓冲
Hex Inverting Buffer . Hex Non-Inverting Buffer 4000/14000/40000 SERIES, HEX 1-INPUT NON-INVERT GATE, PDSO16
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| W982516AH-75 W982516AH75L W982516AH-7 W982516AH-8H |
4M x 4 BANKS x 16BIT SDRAM
|
WINBOND[Winbond]
|
| K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY57V561620CLT HY57V561620CT |
4 Banks x 4M x 16Bit Synchronous DRAM
|
Hynix Semiconductor
|
| K4S641632C-TC/L10 K4S641632C-TC/L1H K4S641632C-TC/ |
1M x 16Bit x 4 Banks Synchronous DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
