| PART |
Description |
Maker |
| 0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor
50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR
晶体管|晶体管|叩| 60V的五（巴西）总裁| 3.7AI（丙）|的SOT - 324VAR
500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology]
MICROSEMI POWER PRODUCTS GROUP
|
| SLQ-K10 |
90o HYBRID SURFACE MOUNT optimized bandwidth 500 - 1000 MHz
90ì HYBRID SURFACE MOUNT optimized bandwidth 500 - 1000 MHz
|
SYNERGY MICROWAVE CORPORATION
|
| RFF500-24S28Y-14 RFF500-48S28TY RFF500-24S28TY RFF |
DC-DC CONVERTERS 500 W, 600 W and 700 W Full-Brick
|
Artesyn Technologies
|
| SRM10SMS |
20 AMP 500 -1000 VOLTS 5 usec STANDARD RECOVERY RECTIFIER
|
Solid States Devices, Inc
|
| DAC3164IRGCR DAC3154 DAC3154IRGCR DAC3154IRGCT |
Dual 12-/10-Bit 500 MSPS Digital-to-Analog Converters
|
Pan Jit International Inc.
Pan Jit International I...
|
| M3500-0510 |
500-1000 MHZ TYPICAL OUTPUT FREQUENCY / MODULATION SENSITIVITY VERSUS TUNING VOLTAGE
|
Micronetics, Inc.
|
| C1206C102KCRACAUTO |
Capacitor, Ceramic, SMD, MLCC, High Voltage, Temp Stable, Auto Grade, 1000 pF, /-10% Tol, 500 V, X7R, 1206 (3216 metric)
|
Kemet Corporation
|
| 1N4738A113 |
Voltage regulator diodes - Configuration: single ; I<sub>F</sub> max: 500 mA; P<sub>tot</sub>: 1000 mW; V<sub>Z</sub> nom: 8.2 V; Package: SOD66 (DO-41); Container: Reel pack axial radial
|
NXP SEMICONDUCTORS
|
| 2N6533 2N6532 2N6530 2N6531 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A.
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A.
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS
From old datasheet system
|
General Electric Solid State
ETC[ETC]
|
| C1206X102KCRACAUTO |
SMD Auto X7R HV Flex, Ceramic, 1000 pF, 10%, 500 V, X7R, SMD, MLCC, FT-CAP, Automotive Grade, 1206
|
Kemet Corporation
|
| C1206C102KCGACTU |
SMD Comm C0G HV, Ceramic, 1000 pF, 10%, 500 V, C0G, SMD, MLCC, Ultra-Stable, Low Loss, Class I, 1206
|
Kemet Corporation
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
|
