| PART |
Description |
Maker |
| PV7F2Y0NSG-201 PV7F2T0NSG-201 PV7F2Y0NSG-203 PV7F2 |
Vandal and Water Resistant, TEMPERATURE: -20°C to 70°C, CONTACT RESISTANCE: 50mOHM Max.
Vandal and Water Resistant, TEMPERATURE: -20掳C to 70掳C, CONTACT RESISTANCE: 50mOHM Max.
Vandal and Water Resistant, TEMPERATURE: -20隆?C to 70隆?C, CONTACT RESISTANCE: 50mOHM Max.
|
http://
E-SWITCH
|
| RG.02.02.3000W |
UV and Vandal resistant PP housing
|
Taoglas antenna solutio...
|
| MPI001 |
Stainless Steel Illuminated Vandal Resistant
|
Elektron Components Ltd.
|
| PV7 |
Vandal and Water Resistant Long Life Expectancy
|
lambind
|
| MPB031 MPB037 MPB038 |
Low Profile Brass Chrome Plated Vandal Resistant
|
Elektron Components Ltd.
|
| 37F1-BC2-AP1 37F1-AB2-AC1 |
Fully Sealed Virtually Indestructible Vandal Resistant Indoor and Outdoor Use
|
Grayhill, Inc
|
| 1T405 |
Vandal Resistant Pushbutton Switch; Illumination:Illuminated; Actuator Style:Round; Actuator Diameter:22mm; Circuitry:SPST; Switch Operation:Push to Make; Switch Terminals:Solder Lug; Contact Current Max:50mA
Variable Capacitance Diode
|
SONY[Sony Corporation]
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSYA254R4 FSYA254D FSYA254D1 FSYA254D3 FSYA254R FS |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| PV6F2P0N1G2G PV6F2P0N1G31 PV6H2P0N1G23 PV6H2P0N1G2 |
pV6 SerieS anti-Vandal Switch
pV6 SerieS anti-Vandal Switch
|
E-SWITCH
|
