| PART |
Description |
Maker |
| 2N1605 |
Germanium NPN Transistors
|
GPD Optoelectronic Devices
|
| AC188 |
Germanium Small Signal Transistors
|
GPD Optoelectronic Devices
|
| 2N1306 2N1302 2N1304 2N1308 |
N-P-N ALLOY-JUNCTION GERMANIUM TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| AC128 |
Germanium Small Signal Transistors
|
GPD Optoelectronic Devices
|
| AC141 |
Germanium Small Signal Transistors
|
GPD Optoelectronic Devices
|
| 2N526 2N525 2N527 2N524 |
(2N524 - 2N527) PNP Germanium Transistors
|
Central Semiconductor
|
| BFP740 |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package
NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| 2N3792 2N3789 2N3790 2N3791 |
POWER TRANSISTORS(10A/150W)
POWER TRANSISTORS(10A150W)
POWER TRANSISTORS(10A,150W)
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION
|
MOSPEC[Mospec Semiconductor]
|
| 2N4277 |
PNP GERMANIUM POWER TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc.
|
| BFU725F BFU725F_N1 BFU725F/N1 BFU725F-N1 BFU725FN1 |
NPN wideband silicon germanium RF transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package
|
NXP Semiconductors
|
| GL607 OA180 OA1182 OA1161 OA1154 |
10 V, 300 mA, gold bonded germanium diode
20 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
140 V, 500 mA, gold bonded germanium diode
55 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
|
| NTE105 |
Germanium PNP Transistor Audio Power Amp
|
NTE[NTE Electronics]
|
