| PART |
Description |
Maker |
| L9D3256M32SBG1 |
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
|
LOGIC Devices Incorpora...
|
| ADDR1333C2G8XXX ADDR1333C2G9XXX ADDR1333C4G8XXX |
DDR3-1333(CL9) 240-Pin R-DIMM 4GB (512M x 72-bits)
|
List of Unclassifed Man...
|
| EBJ41HE4BAFA-8C-E EBJ41HE4BAFA-AE-E EBJ41HE4BAFA-D |
512M X 72 DDR DRAM MODULE, DMA240
4GB Registered DDR3 SDRAM DIMM
|
ELPIDA MEMORY INC
|
| HMT42GR7AMR4C-G7 HMT42GR7AMR4C-H9 HMT351R7AFR4C-G7 |
512M X 72 DDR DRAM MODULE, 20 ns, DMA240
240pin DDR3 SDRAM Registered DIMM
|
HYNIX SEMICONDUCTOR INC
|
| HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM
512M; 100MHz LVTTL interface SDRAM
512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
| SA3488 |
CMOS 256 X 256 DIGITAL SWITCHING MATRIX
|
SAMES[Sames]
|
| MT8985 |
256 x 256 Channels (8 TDM Streams at 2.048 Mbps) Non-blocking Enhance Digital Switch (EDX) with Constant Delay Mode
|
Zarlink Semiconductor
|
| AM24LC02 AM24LC02IN8 AM24LC02IN8A AM24LC02IS8 AM24 |
2-Wire Serial 2K-bits (256 x 8) CMOS Electrically Erasable PROM 2线串行的2K位（256 × 8）的CMOS电可擦除可编程ROM
RES POWER 10 OHM 1W 10% SMD 2线串行的2K位（256 × 8）的CMOS电可擦除可编程ROM
ECONOLINE: REC3-S_DR/H1 - 3W DIP Package- 1kVDC Isolation- Regulated Output- UL94V-0 Package Material- Continuous Short Circiut Protection- Internal SMD design- 100% Burned In- Efficiency to 75%
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| CDP1822 CDP1822CD CDP1822CDX CDP1822CE CDP1822CEX |
256-Word x 4-Bit LSI Static RAM 256 X 4 STANDARD SRAM, 450 ns, PDIP22
256-Word x 4-Bit LSI Static RAM 256 X 4 STANDARD SRAM, 450 ns, CDIP22
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
