PART |
Description |
Maker |
APT20SCD120BHB |
SiC Schottky Diodes
|
Microsemi
|
APT20SCD65K |
SiC Schottky Diodes
|
Microsemi
|
SCS108AG |
SiC Schottky Barrier Diodes
|
Rohm
|
IDW20G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDW12G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH08G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDW10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
BAT15-02L BAT15-02V BAT15-04W BAT15-05W BAT15 BAT1 |
Schottky Diodes - Silicon RF Schottky diode for DBS mixer applications up to 12 GHz RESISTOR,SMD1206,1K,1/4W,5% Silicon Schottky Diodes 硅肖特基二极
|
INFINEON[Infineon Technologies AG]
|
FMDA-10565 |
SiC Schottky Diode
|
Sanken electric
|