PART |
Description |
Maker |
C10-0046 LS9V |
Primary lithium-thionyl chloride High energy density Battery pack
|
saftbatteries
|
LS14500EX |
3.6V Primary lithium-thionyl chloride (Li-SOCl2)High energy density AA-size bobbin cell
|
SAFT
|
LS14500 |
3.6V Primary lithium-thionyl chloride (Li-SOCl2)High energy density AA-size bobbin cell
|
SAFT
|
SCFS12000 SCFS10000 SCFS2000 SCFS4000 SCFS6000 SCF |
1.5 A, 4000 V, SILICON, RECTIFIER DIODE FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY High Voltage,High Density Fast Recovery Rectifier(反向电压4000V,温55℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压6000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压12000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压2000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压10000V,温5℃时平均整流电流1.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(????靛?12000V锛?俯搴?5???骞冲??存??垫?1.5A,楂??锛??瀵?害锛?揩???澶??娴??)
|
Semtech Corporation
|
CBRLDSH2-40 CBRLDSH2-40-15 |
SURFACE MOUNT HIGH DENSITY HIGH DENSITY SCHOTTKY BRIDGE RECTIFIER
|
Central Semiconductor C...
|
SFT1002 SFT1004 SFT1012 SFT1010 SFT1014 SFT1016 |
250 V, 100 A high speed NPN transistor 120 V, 100 A high energy NPN transistor 100 V, 100 A high energy NPN transistor 140 V, 100 A high energy NPN transistor 160 V, 100 A high energy NPN transistor
|
Solid State Devices Inc
|
1024-60LH_883 ISPLSI1024-60LH_883 1024 1024-60LH/8 |
60 MHz in-system prommable high density PLD In-System Programmable High Density PLD EE PLD, 25 ns, PQCC68 :4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
|
Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor] http://
|
ISPLSI5512VA-100LB272 ISPLSI5512VA-70LQ208 5512VA |
70 MHz in-system prommable 3.3V superWIDE high density PLD In-System Programmable 3.3V SuperWIDE⑩ High Density PLD In-System Programmable 3.3V SuperWIDE High Density PLD 110 MHz in-system prommable 3.3V superWIDE high density PLD
|
LATTICE[Lattice Semiconductor]
|
MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET High Energy Power FET TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
ATV750 ATV750-20DM ATV750-20DM_883 ATV750-20GM ATV |
THERMISTOR GLASS 250 OHM DO-35 UV PLD, 25 ns, CDIP24 THERMISTOR GLASS 1K OHM DO-35 OT PLD, 25 ns, PDIP24 THERMISTOR GLASS 10K OHM DO-35 OT PLD, 25 ns, PDIP24 THERMISTOR GLASS 30K OHM DO-35 UV PLD, 25 ns, CDIP24 High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, PDIP24 High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, PDSO24 High Density UV Erasable Programmable Logic Device UV PLD, 20 ns, CDIP24 High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, PQCC28 High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, CQCC28 High Density UV Erasable Programmable Logic Device OT PLD, 20 ns, CDIP24 High Density UV Erasable Programmable Logic Device OT PLD, 25 ns, PDIP24
|
ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
|
ISPLSI1032 ISPLSI1032-60LG_883 ISPLSI1032-80LJ ISP |
In-System Programmable High Density PLD EE PLD, 17 ns, PQCC84 High-Density Programmable Logic
|
Lattice Semiconductor, Corp. LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation
|