| PART |
Description |
Maker |
| FX6ASH03 FX6ASH06 FX6VSH03 FX6KMH03 FX6SMH06 FX6UM |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 3A条（丁）|52AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 30A条（丁）|63AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 3A条（丁）|63AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | SOT-186 晶体管| MOSFET的| P通道| 30V的五（巴西）直| 30A条（丁）|的SOT - 186
|
Renesas Electronics, Corp.
NXP Semiconductors N.V.
|
| 2SA1666YI-UL 2SA1666YI-TR 2SC4903YL-UL 2SA1666YI-0 |
200 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Si, NPN, RF SMALL SIGNAL TRANSISTOR
100 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR
0.2 A, 30 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET
0.2 A, 30 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
0.2 A, 50 V, 12 ohm, P-CHANNEL, Si, POWER, MOSFET
0.2 A, 20 V, 9 ohm, P-CHANNEL, Si, POWER, MOSFET
0.2 A, 50 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
0.2 A, 20 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
UHF BAND, Si, RF SMALL SIGNAL, FET
3000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
1 A, 60 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET
100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
50 mA, 8 V, NPN, Si, SMALL SIGNAL TRANSISTOR
20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET
3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
100 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
0.3 A, 100 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92
2 A, 20 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET
2 A, 900 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET
5 A, 30 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Bourns, Inc.
LEDtronics, Inc.
Integrated Device Technology, Inc.
Vishay Beyschlag
Air Cost Control
Mini-Circuits
Moeller Electric, Corp.
OSRAM GmbH
Cooper Hand Tools
KOA Speer Electronics,Inc.
ProMOS Technologies, Inc.
|
| 2SK2432 2SK2619 2SK2636 2SK2403 2SJ454 2SK2404 2SK |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 7A I(D)
TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 5A I(D)
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 5A I(D)
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 16A I(D) 晶体管| MOSFET的| N沟道| 250V五（巴西）直| 16A条（丁）
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 6A I(D) | TO-262AA 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 6A条（丁）|62AA
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 20A I(D) 晶体管| MOSFET的| N沟道| 450V五（巴西）直| 20A条（丁）
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
Sanyo Electric Co., Ltd.
|
| SUP45N03-13L |
N-Channel Enhancement-Mode Transistor
N-Channel 30-V (D-S), 175C MOSFET
N-Channel MOSFET
N-Channel 30-V (D-S), 175C MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| FDP7030BLSS62Z FDB7030BLS |
56 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 56A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 30V的五（巴西）直|6A条（丁）|63AB
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 56A I(D) | TO-220AB
|
Fairchild Semiconductor, Corp.
ITT, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| FQPF95N03L |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 57A I(D) | TO-220F
30V LOGIC N-Channel MOSFET
57 A, 30 V, 0.0115 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| BSS123 BSS123-T |
150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-channel TrenchMOS(TM) transistor Logic Level FET
N-channel TrenchMOS TM transistor
N-channel TrenchMOS transistor
|
Philips
NXP Semiconductors
|
| BUZ103SL-4 |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.8 A, 55 V, 0.055 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
4.8 A, 55 V, 0.055 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
|
Siemens Semiconductor Group
SIEMENS AG
Infineon Technologies AG
|
| BUZ101SL-4 |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
|
| IRFPG22 IRFPE32 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 1.5A I(D) | TO-247AC
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3.4A I(D) | TO-247AC 晶体管| MOSFET的| N沟道| 800V的五（巴西）直| 3.4AI（四）|47AC
|
Fairchild Semiconductor, Corp.
|
| IRFU320A IRFR320A |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.1A I(D) | TO-251AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.1A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 3.1AI（四）|52AA
|
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