| PART |
Description |
Maker |
| AFT09MS007N AFT09MS007NT1 |
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
| STH360N4F6-2 |
High avalanche ruggedness
N-channel 40 V, 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| STD28P3LLH6AG |
High avalanche ruggedness
|
STMicroelectronics
|
| STL90N10F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPW60R041P6 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STL120N8F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPL65R650C6S |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| IPA60R400CE IPD60R400CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| IPD60R1K0CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STF140N8F7 |
High avalanche ruggedness
|
STMicroelectronics
|
