| PART |
Description |
Maker |
| ESJA08-04-17 |
5.0mA 4.0kV 80nS-- High Voltage Diodes
|
GETAI ELECTRONICS DEVIC...
|
| ESJA08-06-17 |
5.0mA 6.0kV 80nS-- High Voltage Diodes
|
GETAI ELECTRONICS DEVIC...
|
| M69AR024BL80ZB8T |
16 Mbit (1M x16) 1.8V supply, asynchronous PSRAM, 80ns
|
SGS Thomson Microelectronics
|
| HM538253J-8 |
80ns; 1W; V(cc): -0.5 to 7.0V; 262,144-word x 8-bit multiport CMOS video RAM
|
Hitachi Semiconductor
|
| BF623 Q62702-F1053 |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SC4630LS |
NPN Triple Diffused Planar Silicon Transistor 900V / 100mA High-Voltage Amplifier, High-Voltage Switching Applications
900V/100mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| BF393 BF393_D ON0206 |
High Voltage Transistors(NPN)
From old datasheet system
CASE 29-4, STYLE 1 TO-2 (TO-26AA)
HIGH VOLTAGE TRANSISTOR(NPN SILICON)
High Voltage Transistor(NPN)
|
Motorola Inc
ON Semiconductor
Motorola, Inc
|
| 2SC4493 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
|
SANYO
|
| MSK600-15 MSK600B |
Ultra Low Quiescent Current - ±15mA for High Voltage
WIDE BANDWIDTH HIGH VOLTAGE AMPLIFIER
|
M.S. Kennedy Corporatio...
Anaren Microwave
|
| 2SC3645 |
High-Voltage Switching Applications
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SC4475 |
NPN Triple Diffused Planar Silicon Transistor 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications
|
SANYO
|
