| PART |
Description |
Maker |
| ZVP3310A ZVP3310 |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 140 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Zetex Semiconductors
Zetex Semiconductor PLC
|
| MTB8N50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| F2202S |
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 1.6A I(D)
FET, Enhancement, ID 1.6 A
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER
|
Polyfet RF Devices
List of Unclassifed Manufacturers
|
| MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D |
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| STT640509 |
P-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| SMG2306NE |
N-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| IRFP470 |
N-Channel Enhancement Mode MegaMOS FET
|
IXYS[IXYS Corporation]
ETC
|
| STT3470N |
N-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnologie...
|
