| PART |
Description |
Maker |
| VSSAF5N50 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| VF60100C |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| STB30H100C |
Trench MOS Schottky technology
|
Sangdest Microelectroni...
|
| Q67040S4721 Q67040S4723 Q67040S4725 IGW50N60T IGB5 |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| Q67040S4726 IGW75N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
Low Loss IGBT in Trench and Fieldstop technology
|
INFINEON[Infineon Technologies AG]
|
| V20WL45-M3 20WL45-M3I |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| TSF30U45C |
Trench MOS Barrier Schottky Rectifier
|
Taiwan Semiconductor Company, Ltd
|
| 3L40AF-SMAF |
Trench MOS Barrier Schottky Rectifier
|
DONGGUAN YOU FENG WEI E...
|
| VFT1045BP |
Trench MOS Barrier Schottky Rectifier
|
Vishay
|
| TSF30H120C |
Trench MOS Barrier Schottky Rectifier
|
Taiwan Semiconductor Company, Ltd
|
| VT1045CBP-M3-4W VT1045CBP12 |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
