| PART |
Description |
Maker |
| IXGP10N60A |
Low VCE(sat) IGBT, High speed IGBT 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
| RN50C10R0FRE6 RN55C10R0FRE6 RN60C10R0FRE6 RN50D10R |
Metal Film Resistors, Military MIL-R-10509 Qualified, Type RN and MIL-PRF-22684 Qualified, Type RL
|
Vishay Siliconix
|
| DMN3010LFG-7 |
Qualified to AEC-Q101 Standards for High Reliability
|
Diodes Incorporated
|
| DMTH10H030LK3-13 |
Qualified to AEC-Q101 Standards for High Reliability
|
Diodes Incorporated
|
| MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
| SGS23N60UFD SGS23N60UFDTU |
High speed switching
Ultra-Fast IGBT
Discrete, High Performance IGBT with Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| MPQ20051 MPQ20051DQ MPQ20051DQ-AEC1 |
Low Noise, High PSRR, 1A Linear Regulator AEC-Q100 Qualified
|
Monolithic Power System...
|
| MPQ4415MGQB-AEC1 MPQ4415MGQBE-AEC1 |
1.5A, 36V, 2.2MHz, High-Efficiency, Synchronous, Step-Down Converter AEC-Q100 Qualified
|
Monolithic Power System...
|
