| PART |
Description |
Maker |
| RD06HHF1 RD06HHF108 |
RF POWER MOS FET Silicon MOSFET Power Transistor 30MHz,6W
|
Mitsubishi Electric Semiconductor
|
| MAPF-250128-150000 |
Linear RF Power TMOS 150W, 30MHz 100V
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| D240SC4M |
Schottky Rectifiers (SBD) (40V 240A)
|
Shindengen Electric Mfg...
|
| RD00HHS110 |
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| RD00HHS1 RD00HHS1-15 |
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
|
Quanzhou Jinmei Electronic ...
Mitsubishi Electric Semicon...
|
| RD70HHF1 |
Silicon MOSFET Power Transistor 30MHz, 70W
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
| RD100HHF1 RD100HHF111 |
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
|
Mitsubishi Electric Semiconductor
|
| MRF428 |
The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| MRF421 MRF421-15 |
The RF Line NPN Silicon Power Transistor 100W(PEP), 30MHz, 28V
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| 242NQ030 |
30V 240A Schottky Discrete Diode in a D-67 HALF-Pak package
|
International Rectifier
|
| 2SC2099 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS) (LOW SUPPLY VOLTAGE USE)
|
TOSHIBA[Toshiba Semiconductor]
|
