| PART |
Description |
Maker |
| IPB180N10S4-02 |
OptiMOSTM-T2 Power-Transistor
|
Infineon Technologies A...
|
| IPT012N06N |
OptiMOSTM Power-Transistor, 60 V
|
Infineon Technologies A...
|
| IPP040N06N |
OptiMOSTM Power-Transistor
|
Infineon Technologies A...
|
| BSO200P03SH |
OptiMOSTM-P Power-Transistor
7.4 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Infineon Technologies AG
|
| IPA060N06N-16 |
OptiMOSTM Power-Transistor, 60 V
|
Infineon Technologies A...
|
| IPB020N10N5LF |
OptiMOSTM 5 Linear FET, 100 V
|
Infineon Technologies A...
|
| BSZ028N04LS |
OptiMOSTM Power-MOSFET, 40 V
|
Infineon Technologies A...
|
| BSC050NE2LS |
OptiMOSTM Power-MOSFET
|
Infineon Technologies A...
|
| SPU01N60C3 SPD01N60C3 Q67040-S4188 Q67040-S4193 |
for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
COOL MOS⒙ POWER TRANSISTOR
Cool MOS⑩ Power Transistor
Cool MOSPower Transistor
|
INFINEON[Infineon Technologies AG]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| KTD921 |
Darlington Transistor
TRIPLE DIFFUSED NPN TRANSISTOR (COLOR & B/W TV POWER SUPPLY, INDUSTRIAL USE POWER SUPPLY, GENERAL PURPOSE POWER AMPLIFIER DARLINGRON TRANSISTOR)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| STD13003 |
Switching Bipolar Power Transistor |Power Transistor |400V 1.5A 1.2W HFE8~40 开关功率晶体管|功率晶体管| 400V 1.5A的功率为1.2W HFE840
NPN Silicon Power Transistor
|
AUK, Corp.
AUK[AUK corp]
|
