| PART |
Description |
Maker |
| IGW50N65H5 IGW50N65H5-15 |
650V IGBT high speed switching series fifth generation
|
Infineon Technologies A...
|
| IKW40N65F5 IKP40N65F5 PG-TO247-3 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
|
| IKP08N65H5 PG-TO220-3 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| IKP08N65H5 IKP08N65H5-15 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies A...
|
| MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| 10-FY074PA050SM-M582F38 |
650V IGBT H5 and 650V Stealth Si diode
|
Vincotech
|
| IXYN82N120C3H1 |
High-Speed IGBT for 20-50 kHz Switching
|
IXYS Corporation
|
| SGL60N90D |
IGBT CO-PAK (High Speed Switching Low Saturation Voltage High Input Impedance)
|
FAIRCHILD[Fairchild Semiconductor]
|
| RJH60F3DPQ-A0 |
600 V - 20 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJP60F0DPM RJP60F0DPM-15 |
600 V - 25 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
