| PART |
Description |
Maker |
| SXL-208-TR2 |
800 MHz - 970 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
SIRENZA MICRODEVICES INC
|
| APT17F80S APT17F80B |
Power FREDFET; Package: D3 [S]; ID (A): 18; RDS(on) (Ohms): 0.58; BVDSS (V): 800; 18 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET
18 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp.
MICROSEMI POWER PRODUCTS GROUP
|
| APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN
22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN
1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000;
53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
MICROSEMI CORP
|
| IRFR320 IRFU320 FN2412 IRFR3209A |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
From old datasheet system
3.1A 400V 1.800 Ohm N-Channel Power MOSFETs
3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs
0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
|
INTERSIL[Intersil Corporation]
HARRIS SEMICONDUCTOR
|
| HFR-RFK72LF-C250OHMF HFR-RFH52LF-C100OHMF HFR-RFH5 |
0 MHz - 3000 MHz 800 ohm RF/MICROWAVE TERMINATION
High Frequency Surface Mount Terminators
0 MHz - 3000 MHz 100 ohm RF/MICROWAVE TERMINATION
|
IRC - a TT electronics Company.
INTERNATIONAL RESISTIVE CO INC
|
| SCN-2-11 SCN-2-15 SCN-2-19 SCN-2-22 SCN-2-27 SCN-S |
Power Splitters/Combiners 2 Way-0° 50 800 to 2700 MHz
Power Splitters/Combiners 2 Way-0° 50?/a> 800 to 2700 MHz
Power Splitters/Combiners 2 Way-050з 800 to 2700 MHz 800 MHz - 1175 MHz RF/MICROWAVE COMBINER, 0.8 dB INSERTION LOSS
Power Splitters/Combiners 2 Way-050з 800 to 2700 MHz 1425 MHz - 1900 MHz RF/MICROWAVE COMBINER, 0.9 dB INSERTION LOSS
|
http://
Mini-Circuits
|
| SFF11N80N |
11 AMP / 800 Volts 0.95 ohm N-Channel Power MOSFET 11 A, 800 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258
|
Solid State Devices, Inc.
|
| IRF720 |
30V N-Channel PowerTrench MOSFET
3.3A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET
3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
|
| STF6N80K5 STFI6N80K5 |
N-channel 800 V, 1.3 Ohm typ., 4.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package
N-channel 800 V, 1.3 Ohm typ., 4.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in I2PAKFP package
|
ST Microelectronics
|
| SPA06N80C308 SPA06N80C3 |
6 A, 800 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
CoolMOSTM Power Transistor
|
Infineon Technologies AG
|
| SSP2N80A |
2 A, 800 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP
|
|
