| PART |
Description |
Maker |
| SPN02N60C3 SPN02N60C305 |
New revolutionary high voltage technology Ultra low gate charge Ultra low effective capacitances
|
Infineon Technologies AG
|
| STS12NH3LL STS12NH3LL07 |
N-channel 30 V - 0.008 Ω - 12 A - SO-8 ultra low gate charge STripFET Power MOSFET
N-channel 30 V - 0.008 ヘ - 12 A - SO-8 ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| STP30NM30N |
N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET
N-channel 300V - 0.078ヘ - 30A - TO-220 Ultra low gate charge MDmesh⑩ II Power MOSFET
|
STMicroelectronics
|
| STD95NH02L-1 STD95NH02L |
N-channel 24V - 0.0039Ω - 80A - DPAK - IPAK Ultra low gate charge STripFET Power MOSFET
N-channel 24V - 0.0039ヘ - 80A - DPAK - IPAK Ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| STFI13N80K5 |
Ultra low gate charge
|
STMicroelectronics
|
| STF7LN80K5 |
Ultra-low gate charge
|
STMicroelectronics
|
| IXKH35N60C5 |
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
|
IXYS Corporation
|
| SPB07N60C305 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPP04N60S5 SPP04N60S507 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPW11N80C3 SPW11N80C308 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPP21N50C3 SPP21N50C307 SPI21N50C3 SPA21N50C3 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
|
Infineon Technologies AG
|
