| PART |
Description |
Maker |
| MA4E2501L-1290W MA4E2501-1290 MA4E2501L-1290 MA4E2 |
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes
|
MACOM[Tyco Electronics]
|
| U10FWJ2C48M |
SCHOTTKY BARRIER RECTIFIER STACK LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE SWITCHING MODE POWER SUPPLY, CONVERTER & CHOPPER APPLICATION
|
TOSHIBA
|
| PMEG1020EJ PMEG1020EH |
PMEG1020EJ; 10 V, 2 A ultra low Vf MEGA Schottky barrier rectifier in SOD323F package
PMEG1020EH; 10 V, 2 A ultra low Vf MEGA Schottky barrier rectifier in SOD123F package
10 V, 2 A ultra low VF MEGA Schottky barrier rectifiers
|
PHILIPS[Philips Semiconductors]
|
| U10FWJ2C48M 10FWJ2C48M |
SCHOTTKY BARRIER RECTIFIER STACK (LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| KDR411 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW PWER RECTIFICATION, FOR SWITCHING POWER SUPPLY)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
| KDR357 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR367E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| SBL20U80F-15 |
Low VF Trench Barrier Schottky Rectifier
Voltage 80V 20.0 Amp Low VF Trench Barrier Schottky Rectifier
|
SeCoS Halbleitertechnol...
|
| CDBB1100LR-HF CDBB1150LR-HF CDBB1200LR-HF CDBB140L |
Halogen Free Low VF Schottky Barrier, V-RRM=100V, V-R=100V, I-O=1A
Halogen Free Low VF Schottky Barrier, V-RRM=150V, V-R=150V, I-O=1A
Halogen Free Low VF Schottky Barrier, V-RRM=200V, V-R=200V, I-O=1A
Halogen Free Low VF Schottky Barrier, V-RRM=40V, V-R=40V, I-O=1A
Halogen Free Low VF Schottky Barrier, V-RRM=60V, V-R=60V, I-O=1A
|
Comchip Technology
|
| BAT15-099R BAT1599R Q62702-A0043 |
RES CHIP 1K QW 5% SILICON, LOW BARRIER SCHOTTKY, MIXER DIODE
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers/ phase detectors and modulators)
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers, phase detectors and modulators)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MGFC1403 MGFC1403-A12 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
