| PART |
Description |
Maker |
| NGTB20N120IHS |
IGBT 1200V 20A FS1 Induction Heating
|
ON Semiconductor
|
| HGT1Y40N60B3D |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264
70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
|
FAIRCHILD[Fairchild Semiconductor]
|
| STGW39NC60VD07 STGW39NC60VD |
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH⑩ IGBT
|
STMicroelectronics
|
| HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723 |
40A/ 600V/ UFS Series N-Channel IGBTs
40A, 600V, UFS Series N-Channel IGBTs
From old datasheet system
XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN
40 A, 600 V, N-CHANNEL IGBT
|
http://
FAIRCHILD[Fairchild Semiconductor]
INTERSIL[Intersil Corporation]
Fairchild Semiconductor Corporation
|
| FGH40N60UF FGH40N60UFTU |
600V, 40A Field Stop IGBT; Package: TO-247; No of Pins: 3; Container: Rail 80 A, 600 V, N-CHANNEL IGBT, TO-247AB
|
Fairchild Semiconductor, Corp.
|
| FGH40N60SF |
600V, 40A, Field Stop IGBT
|
Fairchild Semiconductor
|
| RJH60D6DPQ-E0 RJH60D6DPQ-E0-T2 |
600V - 40A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RGCL80TS60C11 |
600V 40A Field Stop Trench IGBT
|
ROHM
|
| NGTB20N120L |
IGBT 1200V 20A FS1 Gen Mkt
|
ON Semiconductor
|
| FGL40N150 FGL40N150D GL40N150 FGL40N150DTU |
Copak Discrete IGBT
Electrical Characteristics of the IGBT
The FGL40N150D is designed for induction heating
|
Fairchild Semiconductor Corp
FAIRCHILD[Fairchild Semiconductor]
|
| SGB06N60 SGD06N60 SGP06N60 Q67040-S4450 SGU06N60 Q |
Heat Sink; Package/Case:TO-220; Thermal Resistance:13.4 C/W; Mounting Type:Through Hole; Length:25.4mm; Height:12.7mm; Width:34.92mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes
Fast IGBT in NPT-technology
IGBTs & DuoPacks - 6A 600V TO263AB SMD IGBT
IGBTs & DuoPacks - 6A 600V TO252AA SMD IGBT
IGBTs & DuoPacks - 6A 600V TO220AB IGBT
|
INFINEON[Infineon Technologies AG]
|
| IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
