| PART |
Description |
Maker |
| UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54
16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| PD42S17405L |
16M- bit CMOS dynamic RAMs(16M CMOS 动态RAM) 1,600位CMOS动态存储器,600的CMOS动态内存）
|
NEC, Corp.
|
| MX25L1605ZM MX25L1605ZMC-20 MX25L1605ZMC-20G MX25L |
16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY 16M X 1 FLASH 2.7V PROM, DSO8
|
Macronix International Co., Ltd.
|
| HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| UPD4616112F9-BC80-BC2 UPD4616112F9-BC90-BC2 |
16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT 1,600位CMOS移动指明内存100万字6
1M X 16 APPLICATION SPECIFIC SRAM, 90 ns, PBGA48 6 X 8 MM, FBGA-48
|
NEC, Corp.
Infineon Technologies AG
NEC Corp.
|
| UPD4216400LE-60 |
CMOS 16M-Bit DRAM
|
ETC
|
| MX28F160C3TXAC-11G MX28F160C3BXAC-11 MX28F160C3BXA |
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 110 ns, PBGA48
|
Macronix International Co., Ltd.
PROM
MACRONIX INTERNATIONAL CO LTD
|
| MX25L3205DZNI-12G MX25L6405DZNI-12G MX25L3205DPI-1 |
16M-BIT [x 1 / x 2] CMOS SERIAL FLASH
|
Macronix International
|
| GM71V64403A |
(GM71VS64403AL / GM71V64403A) 16M x 4-Bit CMOS DRAM
|
Hynix Semiconductor
|
| TC58V16BFT |
16M-Bit CMOS NAND Flash EPROM
|
Toshiba Semiconductor
|
| NN5216805 |
(NN5216405 / NN5216805) CMOS 16M-Bit SDRAM
|
Nippon Steel Semiconductor
|
| MX29L1611G MX29L1611GPC-10 MX29L1611GPC-12 MX29L16 |
16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
|
MCNIX[Macronix International]
|
