PART |
Description |
Maker |
GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
BFC43 |
4TH GENERATION MOSFET
|
TT electronics Semelab Limited Seme LAB
|
BFC50 |
4TH GENERATION MOSFET
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
BFC61 |
4TH GENERATION MOSFET
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
SHB131DGGA-I7-4650U SHB131DGGA-I3-4010U |
4th generation Intel U-series processors
|
Axiomtek Co., Ltd.
|
USB2602 |
(USB2601 / USB2602) 4th Generation USB2.0 Flash Media Controller
|
SMSC Corporation
|
PS22053 |
1200V/10A low-loss 4th generation IGBT inverter bridge
|
Mitsubishi Electric Semiconductor
|
GT30J322 |
N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)
|
Toshiba Corporation Toshiba Semiconductor
|
USB2227-AHZS-XX USB2227-NU-05 USB222706 USB2228-AH |
4th Generation USB2.0 Flash Media Controller with Integrated Card Power FETs
|
SMSC[SMSC Corporation]
|
MIC-3395C1-M4E MIC-3395A1-M4E MIC-3395B1-M4E MIC-3 |
6U CompactPCI? 2nd and 3rd Generation Intel Core i3/i5/i7 Processor Blade with ECC Support
|
Advantech Co., Ltd.
|
BFC19 |
4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
Seme LAB
|