| PART |
Description |
Maker |
| LC898123F40XC LC898123F40XC-16 LC898123F40XC-VH |
Optical Image Stabilization (OIS) Auto Focus (AF) Controller & Driver with 40kB Flash Memory
Optical Image Stabilization (OIS) / Auto Focus (AF) Controller & Driver
|
ON Semiconductor
|
| LC898124EP3XC-MH |
Optical Image Stabilization Controller & Driver integrating an on-chip 32-bit DSP
|
ON Semiconductor
|
| LC898124EP2XC-MH |
Optical Image Stabilization Controller & Driver integrating an on-chip 32-bit DSP
|
ON Semiconductor
|
| L3G3IS L3G3ISTR |
MEMS motion sensor: three-axis digital output gyroscope for optical image stabilization
|
ST Microelectronics
|
| 1N4683 1N4684 1N4717 1N4706 1N4713 1N4685 1N4694 1 |
Silicon Epitaxial Planar Z-Diodes 硅外延平面的Z -二极
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压43V，最大反向电.01μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电3V，最大反向电流降.01μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压12V，最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电12V的，最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压14V，最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电14V的，最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.7V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.4V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.0V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压1.8V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.0V，最大反向电.8μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.2V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.3V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.3V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.2V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.7V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压10V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.8V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.6V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压9.1V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.2V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.7V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.6V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压7.5V，最大反向电0μA的硅外延平面型齐纳二极管)
PC 5/10-G-7,62
PCV 5/ 4-G-7,62
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.1V，最大反向电0μA的硅外延平面型齐纳二极管)
From old datasheet system
Silicon Epitaxial Planar Z?Diodes
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
| C9406GC C9914GB C9913GC |
Integrating optical system, image sensor and circuit
|
Hamamatsu Photonics
|
| S5K711LA03 S5K711CA S5K711CA01 S5K711CA02 S5K711CA |
1/7" Optical Size 352x352(CIF) 3.3V/2.8V CMOS Image Sensor
1/7 CIF CMOS Image Sensor
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MAZ8030 |
For stabilization of power supply
|
TY Semiconductor Co., L...
|
| IRH015020LW02 IRJ008010LW02 IRJ015020LW02 IRH05405 |
1500 MHz - 2000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7 dB CONVERSION LOSS-MAX
800 MHz - 1000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7.5 dB CONVERSION LOSS-MAX
5400 MHz - 5900 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7 dB CONVERSION LOSS-MAX
9500 MHz - 10500 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 8 dB CONVERSION LOSS-MAX
2300 MHz - 2500 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7 dB CONVERSION LOSS-MAX
8500 MHz - 9600 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 8 dB CONVERSION LOSS-MAX
2000 MHz - 4000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7.5 dB CONVERSION LOSS-MAX
12000 MHz - 15000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 8.5 dB CONVERSION LOSS-MAX
2100 MHz - 2300 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7 dB CONVERSION LOSS-MAX
3700 MHz - 4200 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7 dB CONVERSION LOSS-MAX
1000 MHz - 2000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7.5 dB CONVERSION LOSS-MAX
16000 MHz - 19000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 9 dB CONVERSION LOSS-MAX
10000 MHz - 12000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 8.5 dB CONVERSION LOSS-MAX
|
MITEQ INC
|
| ADIS16407BMLZ ADIS16407PCBZ |
Ten Degrees of Freedom Inertial Sensor Platform stabilization and control
|
Analog Devices
|
