PART |
Description |
Maker |
EDI8L24128C12BC EDI8L24128C15BC EDI8L24128C12BI ED |
128Kx24 Asynchronous SRAM, 5V
|
WEDC[White Electronic Designs Corporation]
|
AT45DB041B AT45DB041B-CC AT45DB041B-CI AT45DB041B- |
4M bit, 2.7-Volt Only Serial-Interface Flash with Two 264-Byte SRAM Buffers 4-megabit 2.5-volt Only or 2.7-volt Only DataFlash
|
ATMEL[ATMEL Corporation] ETC
|
AT45DB021B AT45DB021B-CC AT45DB021B-CI AT45DB021B- |
From old datasheet system 2M bit, 2.7-Volt Only Serial-Interface Flash with Two 264-Byte SRAM Buffers 2-megabit 2.7-volt Only DataFlash??
|
ATMEL[ATMEL Corporation]
|
AS5LC512K8F-20L_XT AS5LC512K8 AS5LC512K8DJ-12L_883 |
512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT
|
AUSTIN[Austin Semiconductor]
|
AT45DB161B |
16M bit, 2.7-Volt Only Serial-Interface Flash with Two 528-Byte SRAM Buffers
|
Atmel
|
MMC9-65608EV-30-E MMDJ-65608EV-30-E 5962-8959818QT |
Rad. Tolerant 128Kx8, 5-Volt Very Low Power CMOS SRAM Rad. Tolerant 128Kx8, 5-Volt Very Low Power CMOS SRAM
|
ATMEL Corporation
|
AM42BDS6408HD3I AM42BDS6408HE3I M420000077 AM42BDS |
CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory, and 8 Mbit (512 K x 16-Bit) SRAM
|
SPANSION[SPANSION]
|
CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
GS816033T-166I GS816019T-133 GS816019T-150 GS81601 |
166MHz 512K x 32 synchronous SRAM 133MHz 1M x 18 synchronous SRAM 150MHz 1M x 18 synchronous SRAM 166MHz 1M x 18 synchronous SRAM 200MHz 1M x 18 synchronous SRAM 225MHz 1M x 18 synchronous SRAM 250MHz 1M x 18 synchronous SRAM
|
GSI Technology
|
AS7C33256FT32_36A AS7C33256FT32_36A.V1.1 AS7C33256 |
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 8.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 36 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 10 ns, PQFP100 DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/AMMO From old datasheet system Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp. Alliance Semiconductor Corporation ALSC
|
AT49F1024 AT49F1024-50VC |
x16 Flash EEPROM From old datasheet system 1-megabit (64K x 16) 5-volt Only Flash Memory 1M bit, 64K x 16, 5-Volt Read and 5-Volt Write Flash
|
Atmel Corp
|
GS8320Z36GT-166 GS8320Z18GT-166 GS8320Z36GT-225 GS |
1 MEGABIT SERIAL CONFIGURATION PROM 流水线和流量分配36MB通过同步唑的SRAM 1 MEGABIT 3.3 VOLT SERIAL CONFIGURATION 流水线和流量分配36MB通过同步唑的SRAM 36Mb Pipelined and Flow Through Synchronous NBT SRAM 流水线和流量分配36MB通过同步唑的SRAM Coaxial Cable; Coaxial RG/U Type:59; Impedance:75ohm; Conductor Size AWG:20; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes 256K 3.3 VOLT SERIAL CONFIGURATION PROM 128K SERIAL CONFIGURATION PROM
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Electronic Theatre Controls, Inc. http:// List of Unclassifed Manufacturers List of Unclassifed Man...
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