| PART |
Description |
Maker |
| 0-519024-2 0-539787-9 411-18239 0-744003-9 |
This ERGOCRIMP Die is suitable to crimp the following crimp contacts
|
TE Connectivity Ltd
|
| 0-519024-2 0-519151-9 0-539787-6 1-519151-3 |
ERGOCRIMP Die Set for Type XII and Type III
|
Tyco Electronics
|
| 1212691 |
Replacement die - CF 500/DIE RCI 6-1
|
PHOENIX CONTACT
|
| IRG4CC50WB |
IGBT Die in Wafer Form 600 V Size 5 WARP Speed
IRG4CC50WB IGBT Die in Wafer Form
|
Hittite Microwave Corporation
International Rectifier
|
| MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
16Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| SIDC00D60SIC2SAWN SIDC00D60SIC2UNSAWN |
Diodes - HV Chips - 600V, 2A die sawn
Diodes - HV Chips - 600V, 2A die unsawn
|
Infineon
|
| STP60NE03L-10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
ST Microelectronics
|
| STP19N06 STP19N06FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
ST Microelectronics
|
| STB40NE03L-20 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
ST Microelectronics
|
| STP4NA40 STP4NA40FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
ST Microelectronics
|
| STP9NA50 STP9NA50FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
ST Microelectronics
|
| STB6NA60 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
ST Microelectronics
|
