| PART |
Description |
Maker |
| WP-MKT4-173250-S WP-MKT4 WP-MKT4-173225-D WP-MKT4- |
MOSFET DUAL N-CHAN 20V SOT-323 窄带调频甚高频发射模
MOSFET N-CHAN DUAL 200MW SOT-363
MOSFET N-CHAN 50V 350MW SOT-23
MOSFET DUAL N-CHAN 50V SOT-26
FM Narrow Band VHF Transmitter Module
|
Electronic Theatre Controls, Inc.
Wireless Products
ETC[ETC]
List of Unclassifed Manufacturers
|
| IRFZ44N |
50A,60V Heatsink Planar N-Channel Power MOSFET
|
Thinki Semiconductor Co...
|
| ITE08C06 ITE08F06 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 8A条一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| OM6559SP1 OM6558SP1 OM6545SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 25A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展|5A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展| 21A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 49A I(C) | SIP 晶体管| IGBT的|正陈| 500V五（巴西）国际消费电子展|9A一（c）|园区
|
Electronic Theatre Controls, Inc.
OKI SEMICONDUCTOR CO., LTD.
|
| Q62702-D930 BD487 BD488 Q62702-D929 Q62702-C825 SI |
PNP SILICON PLANAR TRANSISTORS
NPN Silicon Darlington Transistor (High current gain High collector current)
ECONOLINE: RI - Custom Solutions Available- 1kVDC Isolation- No Extern. Components Required- UL94V-0 Package Material- No Heatsink Required- Efficiency to 87%
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| CG3310 ECG3323 ECG3312 |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-247VAR
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 8A I(C) | TO-247VAR
|
|
| E504100V1EN1S E504160Z1EN1S E504120X1EN1S E504160Y |
Silicon Power Rectifier Assemblies Plate Heatsink 3 PHASE, SILICON, BRIDGE RECTIFIER DIODE
Silicon Power Rectifier Assemblies Plate Heatsink 3 PHASE, SILICON, RECTIFIER DIODE
Silicon Power Rectifier Assemblies Plate Heatsink SILICON, BRIDGE RECTIFIER DIODE
Silicon Power Rectifier Assemblies Plate Heatsink SILICON, RECTIFIER DIODE
Silicon Power Rectifier Assemblies Plate Heatsink SILICON, VOLTAGE MULTIPLIER DIODE
|
Microsemi, Corp.
MICROSEMI CORP-COLORADO
MICROSEMI CORP-LAWRENCE
|
| TC514410AJ-60 TC514410AP TC514410AP-60 TC514410ASJ |
IC-7 CHAN. CMOS/TTL DR
1,048,576 x 4 BIT DYNAMIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| PPL0500B PPL1000B |
HEATSINK TO220/218 5.0C/W
HEATSINK TO220/218 3.1C/W 散热片TO220/218 3.1C /
|
Hamamatsu Photonics K.K.
|
| WF210000 |
HEATSINK
|
celduc-relais
|
