| PART |
Description |
Maker |
| FD1000FX-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
| 15GN01NA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 2SK711 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
|
TOSHIBA
|
| 2SC2670 |
TRANSISTOR (HIGH/ AM HIGH/ AM FREQUENCY AMPLIFIER/ CONVERTER APPLICATIONS)
XTAL MTL T/H HC49/US
TRANSISTOR (HIGH, AM HIGH, AM FREQUENCY AMPLIFIER, CONVERTER APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SC4258 |
FOR HIGH FREQUENCY/ MEDIUM FREQUENCY AMPLIFY APPLICATION
SMALL-SIGNAL TRANSISTOR
FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION
|
Electronic Theatre Controls, Inc.
ETC
Isahaya Electronics Corporation
Sanyo Semicon Device
List of Unclassifed Manufacturers
|
| 2SA1483 E000536 |
From old datasheet system
HIGH FREQUENCY AMPLIFIER AIDEO AMPLIFIER APPLICATIONS HIGH SPEED SWITCHING APPLICATIONS
TRANSISTOR (HIGH FREQUENCY AMPLIFIER, VIDEO AMPLIFIER, HIGH SPEED SWITCHING APPLICATIONS)
|
Toshiba Semiconductor
|
| KSC2785 KSC2785GBU KSC2785GTA KSC2785LTA KSC2785OB |
Audio Frequency Amplifier & High Frequency OSC.
Audio Frequency Amplifier High
NPN Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| HKQ0603W16NH-T |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)
|
Taiyo Yuden (U.S.A.), I...
|
| FD3000AU-120DA |
HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE 高功率，高频率新闻袋
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| 2SA1201 |
High Voltage : VCEO = -120V High Transition Frequency : fT = 120MHz(typ.)
|
TY Semiconductor Co., Ltd
|
