| PART |
Description |
Maker |
| QVS212CG0R6CDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| 2SC5384 2SC5384-10 |
For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corpora...
|
| 2SC3053 |
FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| FD1000FV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 2SC1781H 2SC1781 |
HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING
|
Hitachi Semiconductor
|
| CPH6003A12 |
High-frequency Medium-power Amplifier Applications
|
Sanyo Semicon Device
|
| NE677M04-T2-A NE677M04 |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
|
Duracell
CEL[California Eastern Labs]
|
| NE664M04-T2 NE664M04 |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
|
NEC Corp.
NEC[NEC]
|
| HSG2005 HSG2005TB-E |
SiGe HBT High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| NE664M04 |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
|
California Eastern Labs
|
