| PART |
Description |
Maker |
| M466F0804DT1-L |
8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh
|
SAMSUNG[Samsung semiconductor]
|
| HM5165805FL HM5165805FLJ-6 HM5165805FTT-5 HM516580 |
64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh
|
HITACHI[Hitachi Semiconductor]
|
| HM5112805FLTD-6 HM5113805FLTD-6 |
128M EDO DRAM (16-Mword × 8-bit) 8k refresh/4k refresh
128M EDO DRAM (16-Mword 隆驴 8-bit) 8k refresh/4k refresh
|
Elpida Memory
|
| HM5113805F-6 HM5113805FLTD-6 HM5113805FTD-6 HM5112 |
DRAM Chip, EDO DRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Hitachi Semiconductor
|
| HM5165405FLTT-5 HM5165405FLTT-6 HM5164405FTT-5 HM5 |
64 M EDO DRAM (16-Mword × 4-bit) 8 k Refresh/4 k Refresh
64 M EDO DRAM (16-Mword 隆驴 4-bit) 8 k Refresh/4 k Refresh
|
http://
Elpida Memory
|
| HYB5117405BT-70 HYB5117405BT-60 HYB5117405BT-50 HY |
-4M x 4-Bit Dynamic RAM 2k & 4k Refresh
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode- EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYB5116405BJ-50 HYB5116405BJ-60 HYB5117405BJ-70 HY |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M X 4 EDO DRAM, 70 ns, PDSO24
POWERLINE: RP12-S_DA - 2:1 Wide Input Voltage Range- 12 Watts Output Power- 1.6kVDC Isolation- Over Current Protection- Five-Sided Continuous Shield- Standard DIP24 and SMD-Pinning- Efficiency to 88%
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS A G
SIEMENS AG
http://
Siemens Semiconductor G...
|
| HYB3117805BSJ-50 HYB3117805BSJ-60 HYB5117805BSJ-60 |
2M x 8 Bit 2k 5 V 60 ns EDO DRAM
2M x 8 Bit 2k 3.3 V 60 ns EDO DRAM
-2M x 8 - Bit Dynamic RAM 2k Refresh
2M x 8-Bit Dynamic RAM 2k Refresh (Hyper Page Mode-EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| M366S3253BTS-C75 M366S3253BTS |
32MB x 64 SDRAM DIMM based on 32MB x 8, 4Banks, 8KB Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYB5118160BSJ-60 HYB5118160BSJ-50 HYB3118160 HYB31 |
1M x 16 Bit 5 V 60 ns FPM DRAM
1M x 16 Bit 5 V 50 ns FPM DRAM
1M x 16-Bit Dynamic RAM 1k Refresh (Fast Page Mode)
1M*16-Bit Dynamic RAM
1k Refresh
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| M464S0924DTS M464S0924DTS-C1H M464S0924DTS-C1L M46 |
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD 8Mx64 SDRAM内存的SODIMMM × 16位，4BanksK的刷新，3.3V的同步DRAM的社民党
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
