PART |
Description |
Maker |
WME128K8-120DEI WME128K8-140DEI WME128K8-140DEIA W |
120ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796 140ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796 250ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796 300ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796 200ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796 150ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
|
White Electronic Designs
|
WF128K64-XG4WX5 WF128K64-XG4W5 WF128K64-120G4WI5 W |
90ns; 5V power supply; 128K x 64 flash module 150ns; 5V power supply; 128K x 64 flash module 128Kx64 5V Flash Module(128Kx64,5V闪速存储器模块) Flash MCP 120ns; 5V power supply; 128K x 64 flash module
|
White Electronic Designs Corporation
|
X5083S8-2.7A X5083V8 X5083PI-4.5A X5083PI-2.7A X50 |
N-CHANNEL SILICON JUNCTION FET SOT23 IC, SMT SRAM 32K X 8 12NS 3.3V SOJ-28-300MIL RTC Module With CPU Supervisor 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDIP8 RTC Module With CPU Supervisor 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
|
Intersil Corporation Intersil, Corp.
|
IS61LV12824-8TQ IS61LV12824 IS61LV12824-10B IS61LV |
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K的24 HIGH-SPEED的CMOS静态RAM.3V电源 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 8 ns, PQFP100 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 8 ns, PBGA119 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 10 ns, PBGA119 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 10 ns, PQFP100
|
天津新技术产业园区管理委员会 Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution Inc
|
EDI88128C100CB EDI88128C EDI88128LP EDI88128P EDI8 |
70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 128K X 8 STATIC RAM CMOS MONOLITHIC CAPACITOR 150UF 200V ELECT TSHA 128KX8 MONOLITHIC SRAM, SMD 5962-89598 128KX8整体式的SRAM,贴962-89598 CAPACITOR 560UF 200V ELECT TSHA 128KX8整体式的SRAM,贴962-89598 CAPACITOR 680UF 200V ELECT TSHA 128KX8整体式的SRAM,贴962-89598 CAPACITOR 270UF 200V ELECT TSHA 128KX8整体式的SRAM,贴962-89598 CAPACITOR 1200UF 200V ELECT TSHA 100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
|
White Electronic Designs N.A. ETC[ETC] Electronic Theatre Controls, Inc.
|
IS61LV12816LL-12T IS61LV12816LL-12BI IS61LV12816LL |
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PQFP44 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
W24L01S-70LE W24L01S-70LI W24L01S-70LL W24L01B-55L |
SUBMINIATURE POWER RELAY 128K X 8 CMOS STATIC RAM 128K X 8 STANDARD SRAM, 70 ns, PDSO32
|
WINBOND[Winbond] Winbond Electronics Corp Winbond Electronics, Corp.
|
GS840E36AGT-180I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8 ns, PQFP100
|
GSI Technology, Inc.
|
IS61VPS12836A-250B3I |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 128K X 36 CACHE SRAM, 2.6 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
CY62137CVSL-70BVI CY62137CV CY62137CV25 CY62137CV2 |
Very high speed: 55 ns and 70 ns (CY62137CV25 / CY62137CV30 / CY62137CV33) 2M (128K x 16) Static RAM 32-Bit Transparent D-Type Latch with 3-State Outputs 96-LFBGA -40 to 85 2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 55 ns, PBGA48 2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PBGA48
|
CYPRESS[Cypress Semiconductor] Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
MX27C1000A MX27C1000AMC-10 MX27C1000AMC-12 MX27C10 |
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32 1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PDIP32 Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 125
|
Macronix International Co., Ltd. MCNIX[Macronix International]
|
MBM29F200BA12 MBM29F200TA12 |
2M (256K×8/128K×16) Bit Flash Memory(V 电源电压256K×8/128K×16闪速存储器) 200万(256K × 8/128K × 16)位快闪记忆体(V的电源电56K × 8/128K × 16闪速存储器 2M (256K?8/128K?16) Bit Flash Memory(??V ?垫??靛?256K?8/128K?16???瀛???ī
|
Fujitsu, Ltd. Fujitsu Limited
|