| PART |
Description |
Maker |
| TSM070N07PQ56 |
Discrete Devices-MOSFET-Single N-Channel
|
Taiwan Semiconductor
|
| TSM4NB50CH TSM4NB50CP |
Discrete Devices-MOSFET-Single N-Channel
|
Taiwan Semiconductor
|
| TSM2N7002KCX |
Discrete Devices-MOSFET-Single N-Channel
|
Taiwan Semiconductor
|
| SK83C SK85C SK86C |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
| MBRS15H45CT |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
| MBRS25H45CT |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
| MBR30150CT-Y |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
| ESH1GM ESH1DM |
Discrete Devices -Diode-Ultra Fast Rectifier
|
Taiwan Semiconductor
|
| 30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
800V 3A Ultra-Fast Discrete Diode in a SMC package
400V 3A Ultra-Fast Discrete Diode in a SMC package
600V 3A Ultra-Fast Discrete Diode in a SMC package
100V 3A Ultra-Fast Discrete Diode in a SMC package
200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp.
IRF[International Rectifier]
VISHAY SEMICONDUCTORS
|
| IDT61298S25TC IDT61298S25TCB IDT61298S25L28B IDT61 |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x4的SRAM
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package x4的SRAM
600V Fast 1-8 kHz Discrete IGBT in a D2-Pak package x4的SRAM
x4 SRAM x4的SRAM
|
STMicroelectronics N.V.
Unisonic Technologies Co., Ltd.
HIROSE ELECTRIC Co., Ltd.
TE Connectivity, Ltd.
|
| BZT52B9V1-G BZT52B8V2-G BZT52B6V8-G BZT52B33-G BZT |
Discrete Devices-Diode-Zener Diode & Array
|
Taiwan Semiconductor
|
