| PART |
Description |
Maker |
| PSMN1R8-30BL |
N-channel 30 V, 1.8 mlogic level MOSFET in D2PAK
|
NXP Semiconductors
|
| PSMN4R2-60PL |
N-channel 60 V, 3.9 mlogic level MOSFET in SOT78
|
NXP Semiconductors
|
| BUK9K8R7-40E |
Dual N-channel 40 V, 9.4 mlogic level MOSFET
|
NXP Semiconductors
|
| PSMNR90-30BL |
N-channel 30 V 1.0 mlogic level MOSFET in D2PAK
|
NXP Semiconductors
|
| BUK9K6R2-40E |
Dual N-channel 40 V, 6.2 mlogic level MOSFET
|
NXP Semiconductors
|
| PSMN1R6-40YLC |
N-channel 40 V 1.55 mlogic level MOSFET in LFPAK using NextPower technology
|
NXP Semiconductors
|
| ADP3342JRM-REEL7 ADP3342 ADP3342ARM-REEL7 |
2nd Level Over Voltage Protection for 2, 3, or 4 Cell LiIon & LiPoly Batteries (2nd Lev Protection) 8-SM8 -25 to 85
Ultralow, IQ, anyCAP Low Dropout Regulator
|
Analog Devices, Inc.
AD[Analog Devices]
|
| PUMA67F16006A-80E PUMA67F16006A-12E PUMA67F16006AI |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
120NS, SOIC, IND TEMP(EEPROM)
70NS, PDIP, IND TEMP(EEPROM)
120NS, TSOP, COM TEMP(EEPROM)
200NS, PLCC, COM TEMP(EEPROM)
DIE(EEPROM)
90NS, PGA, 883C; LEVEL B FULLY COMPLIANT(EEPROM)
120NS, PGA, 883C; LEV B FULLY COMPLIANT(EEPROM)
120NS, PLCC, IND TEMP(EEPROM) X32号，闪存EEPROM模块
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
Lattice Semiconductor, Corp.
Amphenol, Corp.
|
| EMH2602 |
3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| FW905 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
7 A, 20 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Sanyo Semicon Device
SANYO SEMICONDUCTOR CO LTD
|
| SCH2602 |
350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
|
