| PART |
Description |
Maker |
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| KTC4793 |
General Purpose Transistor
TRIPLE DIFFUSED NPN TRANSISTOR(POWER AMPLIFIER DRIVER STAGE AMPLIFIER)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KTC3878 KTC3883 |
TRIPLE DIFFUSED PNP TRANSISTOR(HIGH FREQUENCY/ VHF BAND AMPLIFIER)
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER, HF, VHF AMPLIFIER)
|
KEC[KEC(Korea Electronics)]
|
| 2SA1899 2SA1899O |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | SC-71
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| BC556B BC556 BC558B BC557B BC557C BC557A |
PNP Amplifier Transistor(集电发射极电45V，集电极-基极电压-50V的PNP放大器晶体管) 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA
Amplifier Transistors(PNP Silicon)
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ONSEMI[ON Semiconductor]
|
| 2SA1225 2SA1225Y |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-251AA
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications
|
TOSHIBA
|
| MPS6717RLRA MPS6717_D ON2331 MPS6717 |
One Watt Amplifier Transistor(NPN Silicon) 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
One Watt Amplifier Transistor 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AE
CASE 29?4, STYLE 1 TO?2 (TO?26AA)
From old datasheet system
|
ON Semiconductor
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| 2SC5171 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| KTC3880 |
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER/ VHF BAND AMPLIFIER)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| ENA1125 |
NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications
|
Sanyo Semicon Device
|
| 2SC3776 |
NPN Epitaxial Planar Silicon Transistor UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications
|
SANYO
|
