PART |
Description |
Maker |
PTFA220041M |
High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz
|
Infineon Technologies AG
|
08090 PTF080901 PTF080901E PTF080901F 8090 |
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz LDMOS RF Power Field Effect Transistor 90 W 869-960 MHz LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
|
INFINEON[Infineon Technologies AG] Infineon Technologies A...
|
PTF10100 |
165 Watts/ 860-900 MHz LDMOS Field Effect Transistor 165 Watts 860-900 MHz LDMOS Field Effect Transistor 165 Watts, 860-900 MHz LDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
MAPL-000817-015CPC-072706 |
RF Power Field Effect Transistor LDMOS, 800-1700 MHz, 15W, 26V
|
MACOM[Tyco Electronics]
|
MAPLST1820-060CF |
RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 60W, 26V
|
Tyco Electronics
|
MAPLST0810-090CF MAPLST0810-090CF-05-2004 |
RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
|
MACOM[Tyco Electronics]
|
MAPLST2122-030CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 30W, 28V
|
Tyco Electronics
|
MAPLST2122-015CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V
|
Tyco Electronics
|
2SK3079A |
Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications TRANSISTOR,MOSFET,N-CHANNEL,10V V(BR)DSS,3A I(D),RFMOD TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba. TOSHIBA[Toshiba Semiconductor]
|
SSM3J09FU |
Field Effect Transistor Silicon P Channel MOS Type Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
STD4525NL STU4525NL |
N-Channel Enhancement Mode Field Effect Transistor Dual N-Channel E nhancement Mode Field Effect Transistor
|
SamHop Microelectronics
|
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|