| PART |
Description |
Maker |
| FDMS9620S |
Dual N-Channel PowerTrench? MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ
Dual N-Channel PowerTrench㈢ MOSFET Q1: 30V, 16A, 21.5mヘ Q2: 30V, 18A, 13mヘ
|
Fairchild Semiconductor
|
| CDBER54 |
Small Signal Schottky Diodes, V-RRM=30V, V-R=30V, I-O=200mA
|
Comchip Technology
|
| MCH6613 |
Power MOSFET 30V, 0.35A, 3.7Ohm,-30V, -0.2A, 10.4Ohm, Complementary Dual MCPH6
|
ON Semiconductor
|
| NTMFS4120N |
Power MOSFET 30V, 31A, Single N Channel, SO8 Flat Lead(30V, 31A锛????OSFET)
|
ON Semiconductor
|
| FDP6670AS08 FDB6670AS FDP6670AS |
30V N-Channel PowerTrench? SyncFET?/a>
30V N-Channel PowerTrench庐 SyncFET??/a>
30V N-Channel PowerTrench㈢ SyncFET⑩
|
Fairchild Semiconductor
|
| 16SCYQ030C |
16A 30V Hi-Rel Schottky Common Cathode Diode in a TO-257AA package
SCHOTTKY RECTIFIER 16 Amp, 30V
|
International Rectifier
|
| HUF76113T3ST FN4388 |
4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(4.7A, 30V, 0.031 Ω,N沟道,逻辑电平,UltraFET功率MOS场效应管)
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| STT6602 |
N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| SB30-03P |
Sillicon Epitaxial Schottky Barrier Diode 30V, 3A Rectifier
30V/ 3A Rectifier
|
Sanyo Semicon Device
|
| FDB887010 FDB8870F085 FDB8870-F085 |
30V N-Channel PowerTrenchMOSFET
N-Channel PowerTrench? MOSFET 30V, 160A, 3.9mΩ
|
Fairchild Semiconductor
|
|
