| PART |
Description |
Maker |
| APTDF200H120G |
FRED 50-1700V
|
Microsemi
|
| APTDF400AK170G |
FRED 50-1700V
|
Microsemi
|
| APTDF100H20G |
FRED 50-1700V
|
Microsemi
|
| C67047-A2252-A2 BYP302 |
FRED Diode(FRED 二极 李华明二极管（弗雷德二极管）
FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics)
From old datasheet system
FRED-FET Diode
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| STC03DE170HP07 STC03DE170HP |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| C67047-A2251-A2 BYP301 |
FRED-FET Diode
CAT5E 350MHZ PATCH CORD, 1 FT BLUE,SNAGLESS BOOT
FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics)
From old datasheet system
|
Infineon
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 6MBI150U-170 |
IGBT Module U-Series 1700V / 150A 6 in one-package
|
List of Unclassifed Manufacturers
ETC
|
| ENA1967 |
N-Channel Power MOSFET, 1700V, 3A, 10.5Ohm, TO-3PF-3L
|
ON Semiconductor
|
| STC04IE170HV STC04IE170HV0611 |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17
|
STMicroelectronics
|
| MIMMG150SR170B |
1700V 150A IGBT Module RoHS Compliant
|
Micross Components
|
| 2MBI650VXA-170E-50 |
IGBT MODULE (V series) 1700V / 650A / 2 in one package
|
Fuji Electric
|
