| PART |
Description |
Maker |
| 2SB649AC 2SB649D 2SB649B |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-126
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 1.5AI（丙）|126
|
Glenair, Inc.
|
| KSA1142OSTU |
PNP Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail 0.1 A, 180 V, PNP, Si, POWER TRANSISTOR, TO-126
|
Fairchild Semiconductor, Corp.
|
| BD179-6 BD175-16 BD178-6 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-126
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 3A I(C) | TO-126
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一（c）|26
|
Motorola Mobility Holdings, Inc.
|
| BD13810S |
PNP Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Bulk 1.5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
|
Fairchild Semiconductor, Corp.
|
| BD140-25 BD136-25 BD138-25 |
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | TO-126
Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:3mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1.5AI（丙）|126
|
Electronic Theatre Controls, Inc.
|
| 71349-1051 |
2.54mm (.100") Pitch C-Grid庐 Header, Surface Mount, Dual Row, Vertical, Shrouded,38 Circuits, 0.38渭m (15渭") Gold (Au) Selective Plating, without Press-fit Plast
|
Molex Electronics Ltd.
|
| 2SD669AC 2SD669D 2SD669AB 2SD669 2SD669A |
Silicon NPN Transistor
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|叩| 160V五（巴西）总裁| 1.5AI（丙）|26
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1.5A I(C) | TO-126
|
Hitachi Semiconductor
Maxim Integrated Products, Inc.
|
| 2SD668 2SD668AC 2SD668D 2SD668AB |
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 50MA I(C) | TO-126 晶体管|晶体管|叩| 160V五（巴西）总裁| 50mA的一c）|26
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-126 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 50mA的一（c）|26
Silicon NPN Epitaxial Transistor
|
Vishay Intertechnology, Inc.
Renesas Technology / Hitachi Semiconductor
|
| 2SA15381 2SA1538C 2SC3953C 2SA1538E 2SC3953D 2SA15 |
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 200MA I(C) | TO-126 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 200mA的一（c）|26
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 200MA I(C) | TO-126 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 200mA的一（c）|26
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
HIGH-DEFINITION CRT DISPLAY VIDEO OUTPUT APPLICATIONS
|
Sanyo Semicon Device
|
| BD140 |
TO-126 Plastic-Encapsulate Transistors
|
TY Semiconductor Co., L...
|
| 2SC2688-TO126 |
TO-126 Plastic-Encapsulate Transistors
|
TY Semiconductor Co., L...
|
| MJE13003 |
TO-126 Plastic-Encapsulate Transistors
|
TY Semiconductor Co., L...
|
