| PART |
Description |
Maker |
| 5ST125-R 5STP400-R 5STP160-R 5ST5-R 5STP3.15-R 5ST |
Fuses, RoHS 125mA 250V T IEC GLASS 5X20 TIME LAG BLOW ELECTRIC FUSE, 0.125A, 250VAC, 35A (IR), INLINE/HOLDER
Fuses, RoHS 400mA 250V T IEC GLASS LEAD TIME LAG BLOW ELECTRIC FUSE, 0.4A, 250VAC, 35A (IR), THROUGH HOLE
Fuses, RoHS 160mA 250V T IEC GLASS LEAD TIME LAG BLOW ELECTRIC FUSE, 0.16A, 250VAC, 35A (IR), THROUGH HOLE
Fuses, RoHS 5A 250V T IEC GLASS 5X20
Fuses, RoHS 3.15A 250V T IEC GLASS LEAD
Fuses, RoHS 125mA 250V T IEC GLASS LEAD
Fuses, RoHS 63mA 250V T IEC GLASS LEAD
Fuses, RoHS 630mA 250V T IEC GLASS LEAD
Fuses, RoHS 5A 250V T IEC GLASS LEAD
Fuses, RoHS 800mA 250V T IEC GLASS 5X20
|
Bel Fuse, Inc.
BEL FUSE INC
|
| DF15005S DF1501S |
SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS SINGLE-PHASE GLASS BRIDGE
|
PACELEADER INDUSTRIAL
|
| SF31G-SF38G SF38G |
SUPER FAST GLASS PASSIVATED RECTIFIERS
Glass Superfast Recovery Rectifiers
|
HY ELECTRONIC CORP.
|
| 1N5393GP 1N5399GP 1N5391GP 1N5392GP 1N5394GP 1N539 |
Glass Passivated Junction Rectifier(????荤?缁???存???
Glass Passivated Junction Rectifier(钝化玻璃结型整流 结玻璃钝化整流（钝化玻璃结型整流器）
GLASS PASSIVATED JUNCTION RECTIFIER 玻璃钝化整流
|
GE Security, Inc.
GE[General Semiconductor]
|
| DO-204AH 1N5918B MZ4625 BZX79C7V5RL BZX79C10 BZX79 |
500 mW DO-35 Glass Zener Voltage Regulator Diodes
500mWDO-35GlassZenerVoltageRegulatorDiodes
GLASS ZENER DIODES 500 MILLIWATTS 1.8.200 VOLTS
|
MOTOROLA[Motorola, Inc]
EIC discrete Semiconductors
Motorola Inc
|
| FB1006 FB1010 FB1010L FB1009L FB1000 FB1000L FB100 |
10 Amp. Glass Passivated Bridge Rectifier 10安培。玻璃钝化整流桥
Bridge Rectifiers (Power) 桥式整流器（电力
10 Amp Glass Passivated Bridge Rectifier
10 Amp.Glass Passivated bridge rectifier
|
Fagor Electronics
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
|
| 1N4944GP 1N4946GP 1N4947GPE 1N4944GPE/4G 1N4942GP |
1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
Diodes
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 600V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 400V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 200V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 1000V
|
Vishay Beyschlag
|
| GS1A GS1B GS1D GS1G GS1J GS1K GS1M |
Standard Recovery Pack: SMA
SURFACE MOUNT GLASS PASSIVATED RECTIFIER VOLTAGE拢潞50 TO 1000V CURRENT拢潞 1.0A
SURFACE MOUNT GLASS PASSIVATED RECTIFIER VOLTAGE?0 TO 1000V CURRENT 1.0A
SURFACE MOUNT GLASS PASSIVATED RECTIFIER VOLTAGE?0 TO 1000V CURRENT?/a> 1.0A
|
Gulf Semiconductor
http://
|
| GDZJ3.0 GDZJ4.3 GDZJ2.7 GDZJ2.0 GDZJ2.2 GDZJ2.4 GD |
5.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
15 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
16 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
13 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
3.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
11 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
10 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
6.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 GLASS PACKAGE- 2
AXIAL LEAD ZENER DIODES
|
Pan Jit International I...
Rohm Co., Ltd.
Diodes, Inc.
NXP Semiconductors N.V.
Pan Jit International Inc.
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
|
