| PART |
Description |
Maker |
| MTA1N60E |
FULLY ISOLATED TMOS E-FET POWER FIELD EFFECT TRANSISTOR
Fully Isolated TMOS E-FET / Power Rifld Effect Transistor
|
MOTOROLA[Motorola, Inc]
|
| BUJ303AX BUJ303AX11 |
NPN power transistor Very high voltage capability Isolated package
|
NXP Semiconductors
|
| Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL
SIPMOS垄莽 Power-Transistor
SIPMOS庐 Power-Transistor
SIPMOS? Power-Transistor
SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
| FML10 |
From old datasheet system
General purpose transistor (isolated transistor and diode)
|
Rohm
|
| UML6N |
2-WIRE FACTORY PROGRAMMED W/TIN PLATING
General purpose transistor (isolated transistor and diode)
|
Rohm CO.,LTD.
ROHM[Rohm]
|
| FML9_1 FML9 |
General purpose transistor (isolated transistor and diode)
|
ROHM[Rohm]
|
| UML12N EML12 |
GENERAL PURPOSE TRANSISTOR (ISOLATED TRANSISTOR AND DIODE)
|
Advanced Semiconductor
ROHM[Rohm]
|
| QSZ41 |
General purpose transistor (isolated transistor and diode)
|
Rohm
|
| QSL12 |
General purpose transistor (isolated transistor and diode)
|
ROHM[Rohm]
|
| NTE912 |
Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One Differentially-Connected Transistor Pair) 集成电路通用晶体管阵列（三个孤立的晶体管和一个差异，连接晶体管配对）
|
NTE[NTE Electronics]
|
| LTM2881CV-5-PBF LTM2881IV-5-PBF LTM2881CV-3-PBF LT |
Complete Isolated RS485/RS422 楼矛Module Transceiver Power
Complete Isolated RS485/RS422 渭Module Transceiver Power
Complete Isolated RS485/RS422 μModule Transceiver Power
|
Linear Technology
|
