| PART |
Description |
Maker |
| APTDF60H1201G |
FRED 50-1700V
|
Microsemi
|
| APTDF30H601G |
FRED 50-1700V
|
Microsemi
|
| APTDF430U100G |
FRED 50-1700V
|
Microsemi
|
| APTDF400AK170G |
FRED 50-1700V
|
Microsemi
|
| APT60DF20HJ |
FRED 50-1700V
|
Microsemi
|
| STC03DE170HV07 STC03DE170HV |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| CM200DU-34KA |
IGBT Modules:1700V
|
Mitsubishi Electric Corporation
|
| CM400DU-34KA |
IGBT Modules:1700V
|
Mitsubishi Electric Corporation
|
| WPH4003 WPH4003-1E |
N-Channel Power MOSFET 1700V, 3A, 10.5, TO-3PF-3L
|
ON Semiconductor
|
| BYP103 C67047-A2066-A2 SIEMENSAG-C67047-A2066-A2 |
From old datasheet system
FRED DIODE (FAST RECOVERY EPITAXIAL DIODE SOFT RECOVERY CHARACTERISTICS)
FRED-FET Diode
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| STC04IE170HV STC04IE170HV0611 |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17
|
STMicroelectronics
|
