| PART |
Description |
Maker |
| APT20SCD120BHB |
SiC Schottky Diodes
|
Microsemi
|
| APT20SCD65K |
SiC Schottky Diodes
|
Microsemi
|
| IDH20G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDW40G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH04G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| SML10SIC03NJC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
| FMDA-10565 |
SiC Schottky Diode
|
Sanken electric
|
| WSD705 WSD706 |
Surface Mount Schottky Barrier Diodes
SMALL SIGNAL SCHOTTKY DIODES 30m AMPERES 40 VOLTS
|
Weitron Technology
ETC
|
| IDH08S120 |
thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
| SCS215AG |
SiC Schottky Barrier Diode
|
Rohm
|
