| PART |
Description |
Maker |
| BC440-6 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 2A I(C) | TO-39
Bipolar NPN Device in a Hermetically sealed TO39
|
Seme LAB
|
| BC440-4 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 2A I(C) | TO-39
Bipolar NPN Device in a Hermetically sealed TO39
|
Seme LAB
|
| BSY91 BSY81 BSY84 BSS59 BSW39 BSV84 BSW52 BSW51 BS |
Transient Voltage Suppressor Diodes
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-39
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 1A I(C) | TO-39
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-39
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-39
晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1A条一（c）| TO - 39封装
TRANSISTOR | BJT | PNP | TO-39 晶体管|晶体管|进步党| TO - 39封装
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | TO-39 晶体管|晶体管|叩| 40V的五（巴西）总裁| TO - 39封装
|
Kycon, Inc.
|
| MMBT4401-TP |
TRANSISTOR NPN GP 40V SOT23 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Micro Commercial Components, Corp.
|
| PBSS4240Y |
40V low VCEsat NPN transistor
|
Philips Semiconductors
NXP
|
| PBSS4240DPN |
40V low VCEsat NPN/PNP transistor
|
Philips Semiconductors
NXP
|
| SBA160-04Y |
Schottky Barrier Diode (Twin Type Cathode Common) 40V, 16A Rectifier
40V, 16A Rectifier(用于高频整流应用的重复反向电0V，平均整流电6A 整流
40V/ 16A Rectifier
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 2N5814 |
Trans GP BJT NPN 40V 0.75A 3-Pin TO-92 Box
|
New Jersey Semiconductor
|
| CDBV6-00340TI-G |
Small Signal Schottky Diodes, V-RRM=40V, V-R=40V, I-O=30mA
|
Comchip Technology
|
| CDBKM140 |
Schottky Barrier Rectifiers Diodes, V-RRM=40V, V-R=40V, I-O=1A
|
Comchip Technology
|
| DSS2540M-7B |
40V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR
|
Diodes Incorporated
|
