PART |
Description |
Maker |
2931-150 |
Pulsed Power S-Band (Si)
|
Microsemi
|
1214-800P |
Pulsed Power L-Band (Si)
|
Microsemi
|
1214-300M |
Pulsed Power L-Band (Si)
|
Microsemi
|
3134-180P |
Pulsed Power S-Band (Si)
|
Microsemi
|
HVV1214-025S |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty
|
HVVi Semiconductors, Inc.
|
HVV1011-035 |
L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50楼矛s Pulse, 5% Duty for TCAS and Mode-S Applications L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50μs Pulse, 5% Duty for TCAS and Mode-S Applications
|
HVVi Semiconductors, Inc.
|
HVV1012-250 HVV1012-250-EK |
L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10楼矛s Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications
|
HVVi Semiconductors, Inc.
|
HVV0912-150 HVV0912-150-EK |
L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10レs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications
|
HVVi Semiconductors, Inc.
|
1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR 300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp. Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
MDS800 |
RF Power Transistors: AVIONICS MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 800; P(in) (W): 110; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technology Microsemi, Corp.
|
|