PART |
Description |
Maker |
2729-125 |
Pulsed Power S-Band (Si)
|
Microsemi
|
2729-300P |
Pulsed Power S-Band (Si)
|
Microsemi
|
1014-6A |
Pulsed Power L-Band (Si)
|
Microsemi
|
2731-200P |
Pulsed Power S-Band (Si)
|
Microsemi
|
1214-220M |
Pulsed Power L-Band (Si)
|
Microsemi
|
3134-100M |
Pulsed Power S-Band (Si)
|
Microsemi
|
HVV1214-025S |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty
|
HVVi Semiconductors, Inc.
|
TCS450 |
450 Watts, 45 Volts, Pulsed Avionics 1030 MHz TCAS 1030 MHz, Class C, Common Base, Pulsed; P(out) (W): 450; P(in) (W): 100; Gain (dB): 6.5; Vcc (V): 45; Pulse Width (µsec): 32; Duty Cycle (%): 2; Case Style: 55KT-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
MICROSEMI POWER PRODUCTS GROUP GHz Technology Microsemi, Corp.
|
RFHA1027 |
500W GaN Wide-Band Pulsed Power Amplifier
|
RF Micro Devices
|
MDS150 |
150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 150; P(in) (W): 20; Gain (dB): 10; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55AW-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation Microsemi, Corp.
|
|