| PART |
Description |
Maker |
| K4D623238B-GQC |
512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM wi Extended Data Out Data Sheet
|
Samsung Electronic
|
| HI-8787 HI-8787PQI HI-8787PQT HI-8788 HI-8788PQI H |
16 Bit Parallel data converted to 429 and 561 serial data out
ARINC INTERFACE DEVICE 16-BIT PARALLEL DATA CONVERTED 429&561 SERIAL DATA OUT
512 MACROCELL 3.3 VOLT ZERO POWER ISP CP - NOT RECOMMENDED for NEW DESIGN
|
HOLTIC[Holt Integrated Circuits]
|
| W9725G6JB25I |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| M13S5121632A-2S |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| ELS-316GWB |
Technical Data Sheet 0.36 Single Data Displays 技术数据表0.36单数据显
|
Everlight Electronic Co., Ltd.
EVERLIGHT[Everlight Electronics Co., Ltd]
|
| F-137G |
High Frequency Data Line Filter 3 Coils 6 Data Lines
|
Rhombus Industries Inc.
|
| M14D5121632A-2K |
Internal pipelined double-data-rate architecture; two data access per clock cycle
|
Elite Semiconductor Mem...
|
| HI-878306 |
ARINC INTERFACE DEVICE 8 bit parallel data converted to 429 & 561 serial data out
|
Holt Integrated Circuits
|
| NT5DS4M32EG-6 NT5DS4M32EG NT5DS4M32EG-5 NT5DS4M32E |
1M 】 32 Bits 】 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| W9412G6JH W9412G6JH-5 |
2M ?4 BANKS ?16 BITS DDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
|
Winbond
|
| ST7FDALIF2B6 |
8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI, DALI (DATA BRIEFING)
|
SGS Thomson Microelectronics
|
| W9412G2IB W9412G2IB4 W9412G2IB-6I |
1M × 4 BANKS × 32 BITS GDDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
4M X 32 DDR DRAM, 0.7 ns, PBGA144
|
Winbond
WINBOND ELECTRONICS CORP
|
