PART |
Description |
Maker |
IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
MG200H1AL2 MG200H1FL1A |
V(cbo): 600V; V(ceo): 600V; V(ebo): 6V; 800W; IGBT module (DISCRETE/OPTO)
|
Toshiba Semiconductor
|
IRG4PC30S IRG4PC30SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)
|
IRF[International Rectifier]
|
AM29841A/BKA AM29841A/B3A AM29843PC AM29843ALC AM2 |
600V Low-Vceon Copack IGBT in a TO-220 FullPak package; Similar to IRGIB7B60KD with Lead Free Packaging 600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package; A IRGS10B60KD with Standard Packaging 600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; Similar to IRG4BC15UD-L with Lead Free Packaging 600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; A IRGSL6B60KD with Standard Packaging 600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; Similar to IRGSL15B60KD with Lead Free Packaging 1200V UltraFast 4-20 kHz CoPack IGBT in a TO-274AA package; Similar to IRG4PSH71UD with Lead Free Packaging 600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package; A IRGS6B60KD with Standard Packaging 600V Warp2 150kHz Copack IGBT in a TO-247AC package; A IRGP50B60PD1 with Standard Packaging 600V UltraFast Copack Trench IGBT in a TO-247AD package with Ultra-Low VF Diode for Induction Heating and Soft Switching Apps; A IRGP4068D-EPBF with Standard Packaging 600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package; A IRG4BC30FD-S with Standard Packaging 600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; A IRG4BC15UD-L with Standard Packaging 600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package; A IRGS4B60KD1 with Standard Packaging 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AD package; Similar to IRG4PH40UD2-E with Lead Free Packaging 10位D型锁存器 600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package; Similar to IRG4RC10KD with Lead Free Packaging 9位D型锁存器 600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package; A IRGB6B60KD with Standard Packaging 9位D型锁存器
|
Duracell TT electronics Semelab, Ltd. NXP Semiconductors N.V.
|
ISL9860PF2 ISL9R860PF2 SAMSUNGSEMICONDUCTORCO.LTD. |
8A, 600V Stealth⑩ Diode 8A 600V Stealth Diode 8A, 600V Stealth Diode 8A条,600V的隐形二极管
|
FAIRCHILD[Fairchild Semiconductor] SAMSUNG[Samsung semiconductor] Fairchild Semiconductor Corporation SAMSUNG SEMICONDUCTOR CO. LTD. Fairchild Semiconductor, Corp. Samsung Semiconductor Co., Ltd.
|
IXGX64N60B3D1 IXGR48N60C3D1 IXGR48N60B3D1 IXGP48N6 |
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
|
IXYS Corporation
|
FQD3N60CTMWS FQU3N60C |
N-Channel QFETMOSFET 600V, 2.4A, 3.4 N-Channel QFET® MOSFET 600V, 2.4A, 3.4Ohms
|
Fairchild Semiconductor
|
A29040AV-90 A29040A-70 A29040A-90 A29040AV-55 A290 |
AUTOMATIC 600A CLAMPMETER WITH AUTOTECT RoHS Compliant: NA 512K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Test RoHS Compliant: NA Fuse; Current Rating:1A; Voltage Rating:600V; Voltage Rating:600V; Voltage, AC:600V RoHS Compliant: NA 512k × 8位CMOS 5.0伏只,统一部门快闪记忆
|
AMIC Technology Corporation AMIC Technology, Corp.
|
RHRP860CC FN3964 RHRP840CC |
8A, 400V - 600V Hyperfast Dual Diodes 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB 8A/ 400V - 600V Hyperfast Dual Diodes 8A, 400V - 600V Hyperfast Dual Diodes(8A, 400V-600V 超快速二极管) 8 A, 400 V, SILICON, RECTIFIER DIODE From old datasheet system
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Intersil, Corp. Intersil Corporation
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