| PART |
Description |
Maker |
| HUF75321D3 HUF75321D3S FN4351 |
20A/ 55V/ 0.036 Ohm/ N-Channel UltraFET Power MOSFETs
From old datasheet system
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036Ω, N沟道UltraFET功率MOS场效应管)
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036惟, N娌??UltraFET???MOS?烘?搴??)
|
Intersil Corporation
FAIRCHILD SEMICONDUCTOR CORP
|
| 151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82
晶体管|晶体管|叩| 100V的五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 180V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 140伏特五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 50V五（巴西）总裁| 6A条一c）|2
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五（巴西）总裁|甲一（c）| STR-5/16
|
Samsung Semiconductor Co., Ltd.
Molex, Inc.
Intel, Corp.
|
| FDD8424HF085A13 |
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ
|
Fairchild Semiconductor
|
| K5AA111APD-ZZL1ZZBZ4 K5AA122ARC-Z1 K5AA112BAA-ZZR7 |
ROCKER SWITCH, SPST, LATCHED, 20A, 18VDC, PANEL MOUNT
ROCKER SWITCH, DPST, LATCHED, 20A, 18VDC, PANEL MOUNT
ROCKER SWITCH, DPDT, LATCHED, 20A, 18VDC, PANEL MOUNT
ROCKER SWITCH, SPDT, MOMENTARY, 20A, 18VDC, PANEL MOUNT
|
OTTO ENGINEERING INC
|
| S20S60 S20S30 S20S40 S20S50 |
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 肖特基（20A30 - 60V的）
SCHOTTKY BARRIER RECTIFIERS(20A/30-60V)
SCHOTTKY BARRIER RECTIFIERS(20A,30-60V)
|
Mospec Semiconductor, Corp.
MOSPEC[Mospec Semiconductor]
|
| S20S90 S20S100 S20S70 S20S80 |
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 肖特基（20A70 - 100V的）
SCHOTTKY BARRIER RECTIFIERS(20A/70-100V)
SCHOTTKY BARRIER RECTIFIERS(20A,70-100V)
|
Mospec Semiconductor, Corp.
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 30CTH02 30CTH02-1 30CTH02FP 30CTH02S |
200V 20A HyperFast Discrete Diode in a TO-220AB package
300V 20A HyperFast Discrete Diode in a TO-262 package
300V 20A HyperFast Discrete Diode in a TO-220 FullPak package
200V 30A HyperFast Discrete Diode in a D2-Pak package
|
International Rectifier
|
| HUFA76429D3ST HUFA76429D3 HUFA76429D3S |
20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFETPower MOSFETs
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-252AA 20 A, 60 V, 0.029 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
Fairchild Semiconductor, Corp.
|
| STB20NM50FD |
N-CHANNEL 500V 0.20 OHM 20A D2PAK FDMESH POWER MOSFET
N-CHANNEL 500V - 0.20ohm - 20A D2PAK FDmesh⑩Power MOSFET With FAST DIODE
N-CHANNEL 500V - 0.20ohm - 20A D2PAK FDmeshPower MOSFET With FAST DIODE
N-CHANNEL 500V - 0.20ohm - 20A D2PAK FDmesh?Power MOSFET With FAST DIODE
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STW20NB50 4829 |
N-Channel 500V-0.22Ω-20A- TO-247 PowerMESHTM MOSFET(Ｎ沟道MOSFET) N沟道500V -0.22Ω- 20A条至247 PowerMESHTM MOSFET的（不适用沟道MOSFET的）
From old datasheet system
N - CHANNEL 500V - 0.22 - 20A - TO-247 PowerMESH TM MOSFET
|
STMicroelectronics N.V.
|
| MURB2020CT-1 MUR2020CT MURB2020CT MURB2020CTTRL MU |
200V 20A HEXFRED Common Cathode Diode in a TO-220AB package
Ultrafast Rectifier
200V 20A HEXFRED Common Cathode Diode in a D2-Pak (UltraFast) package
200V 20A HEXFRED Common Cathode Diode in a TO-262 package
|
IRF[International Rectifier]
|
| HGT1S20N35G3VLS HGT1S20N35G3VL HGTP20N35G3VL FN400 |
72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN
20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
From old datasheet system
20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs
|
http://
INTERSIL[Intersil Corporation]
|
