| PART |
Description |
Maker |
| PEB22554-HT |
POT 10K OHM 9MM HORZ PLA BUSHING
|
SIEMENS AG
|
| 3CG751 |
TO-92MOD Plastic-Encapsulate Transistors
|
TY Semiconductor Co., Ltd
|
| 2SB892 |
TO-92MOD Plastic-Encapsulate Transistors
|
TY Semiconductor Co., Ltd
|
| 2SC2383 2SC2383-TO92MOD |
TO-92MOD Plastic-Encapsulate Transistors
|
TY Semiconductor Co., L...
|
| 2SB647 |
TO-92MOD Plastic-Encapsulate Transistors
|
TY Semiconductor Co., L...
|
| PEEL173 |
IC,SIMPLE-EEPLD,PLA-TYPE,CMOS,DIP,24PIN,PLASTIC
|
ami
|
| AM27S21APC |
1KBIT(256X4)PROM 30NS 16BR PLA 256 X 4 OTPROM, 30 ns, PDIP16
|
Advanced Micro Devices, Inc.
|
| 3CG751 |
TO-92MOD Plastic-Encapsulate Transistors
|
Jiangsu Changjiang Elec...
|
| 15-80-0109 0015800109 70567-0275 A-70567-0275 |
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 10 Circuits, 0.38μm (15μ) Gold, (Au) Selective Plating
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 10 Circuits, 0.38渭m (15渭) Gold, (Au) Selective Pla
Molex Electronics Ltd.
|
Molex Electronics Ltd.
|
| A-70567-0349 15-80-1221 0015801221 |
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 22 Circuits, 0.76渭m (30渭) Gold, (Au) Selective Pla
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 22 Circuits, 0.76μm (30μ) Gold, (Au) Selective Plating
|
Molex Electronics Ltd.
|
| A-70567-0364 15-80-1521 |
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 52 Circuits, 0.76渭m (30渭) Gold, (Au) Selective Pla
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 52 Circuits, 0.76μm (30μ) Gold, (Au) Selective Plating
|
Molex Electronics Ltd.
|
|
