| PART |
Description |
Maker |
| 1214-150L |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 1214-220M |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 1214-300M |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 1214-370M |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 3134-100M |
Pulsed Power S-Band (Si)
|
Microsemi
|
| 2731-100M |
Pulsed Power S-Band (Si)
|
Microsemi
|
| TAN350 |
350 Watts, 50 Volts, Pulsed Avionics 960 1215 MHz 350瓦，50伏特，脉冲航空电601215兆赫
TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 350; P(in) (W): 70; Gain (dB): 7; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
350 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz
|
Electronic Theatre Controls, Inc.
Microsemi, Corp.
ETC[ETC]
List of Unclassifed Manufacturers
|
| RFHA1020 |
280W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
| HVV1011-035 |
L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50楼矛s Pulse, 5% Duty for TCAS and Mode-S Applications
L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50μs Pulse, 5% Duty for TCAS and Mode-S Applications
|
HVVi Semiconductors, Inc.
|
| HVV1214-075 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200レs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| VTU-5192F1 |
Unigrid Pulsed I-J Band Helix TWT Series
|
Communications & Power Industries, Inc.
|
|
