| PART |
Description |
Maker |
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| 60CTT015 |
30 A, 15 V, SILICON, RECTIFIER DIODE, TO-220AB
TRENCH SCHOTTKY RECTIFIER
15V 60A Trench Schottky Discrete Diode in a TO-220 package
|
VISHAY SEMICONDUCTORS
IRF[International Rectifier]
|
| ISL9N303AS3ST ISL9N303AS3 ISL9N303AP3 N303AS N303A |
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
RECTIFIER SCHOTTKY DUAL COMMON-CATHODE 30A 40V 250A-Ifsm 0.55Vf 1A-IR D2PAK 800/REEL-13 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Logic Level UltraFET Trench MOSFETs 30V / 75A / 3.2m
N-Channel Logic Level UltraFET Trench MOSFETs 30V 75A 3.2m
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m?/a>
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| Q67040S4726 IGW75N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
Low Loss IGBT in Trench and Fieldstop technology
|
INFINEON[Infineon Technologies AG]
|
| ISL9N304AP3 ISL9N304AS3ST ISL9N304AS3STL86Z |
75 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5m?/a>
N-Channel Logic Level UltraFET Trench MOSFETs 30V/ 75A/ 4.5m
N-CHANNEL LOGIC LEVEL ULTRAFET TRENCH MOSFETS 30V, 75A, 4.5Mз
N-Channel Logic Level UltraFET R Trench MOSFETs 30V, 75A, 4.5mOhm
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| CM100TJ-24F |
128 x 64 pixel format, LED or EL Backlight available
Trench Gate Design Six IGBTMOD 100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| IRG6B330UDPBF IRG6B330UDPBF-15 |
PDP TRENCH IGBT
Advanced Trench IGBT Technology
|
International Rectifier
|
| CM75DU-12F |
Trench Gate Design Dual IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| FDB3682_FDP3682 FDB3682 FDP3682 |
N-Channel UltraFET Trench MOSFET 100V, 32A, 36mOhm
N-Channel UltraFET Trench MOSFET 100V, 32A, 36m Ohm
From old datasheet system
|
Fairchild Semiconductor
|
| CM100TU-24F |
Trench Gate Design Six IGBTMOD100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD 100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM350DU-5F |
Trench Gate Design Dual IGBTMOD 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD⑩ 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD350 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
